RJH60D1DPP-M0

RJH60D1DPP-M0 Silicon N Channel IGBT Application: Inverter Features High breakdown-voltage Low on-voltage Built-in diode www.DataSheet4U.com Preliminary REJ03G1839-0100 Rev.1.00 Oct 14, 2009 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iD(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 16 8 32 8 32 20 6.25 150 –55 to +150 Unit V V A A A A A W °C/ W °C °C REJ03G1839-0100 Rev.1.00 Oct 14, 2009 Page 1 of 3 RJH60D1DPP-M0 Preliminary www.DataSheet4U.com Electrical Characteristics Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES / IR IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf VF trr Min — — 4.0 — — — — — — — — — — —...