IGBT
Preliminary Datasheet
RJH60D7DPK
600V - 50A - IGBT Application: Inverter
R07DS0165EJ0400 Rev.4.00
Apr 19, 2012
Featur...
Description
Preliminary Datasheet
RJH60D7DPK
600V - 50A - IGBT Application: Inverter
R07DS0165EJ0400 Rev.4.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C
12 3
1. Gate
G
2. Collector 3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Dio...
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