RJH60F5DPK

Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package  Trench gate and thin wafer technology  High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1 23 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) E Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW  5 s, duty cycle  1% Symbol VCES VGES IC IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-c Tj Tstg Ratings 600 ±30 80 40 160 100 260.4 0.48 2.0 150 –55 to +150 (Tc = 25°C) Unit V V A A A A W °C/W °C/W °C °C R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Page 1 of 7 RJH60F5DPK Preliminary Electrical Characteristics Item Symbol Min Zero gate voltage collector current ICES  Gate to emitter leak current IGES  Gate to emitter cutoff voltage VGE(off) 4 Collector to emitter saturation volt...