FDS4435BZ P-Channel PowerTrench® MOSFET
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June 2007
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20mΩ
Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3) High performanc...
