FDS4435BZ

FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A „ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A „ Extended VGSS range (-25V) for battery applications „ HBM ESD protection level of ±3.8KV typical (note 3) „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS compliant April 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D D D D Pin 1 SO-8 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage ...