AOP607

www.DataSheet4U.com AOP607 Complementary Enhancement Mode Field Effect Transistor General Description The AOP607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pbfree (meets ROHS & Sony 259 specifications). AOP607L is a Green Product ordering option. AOP607 and AOP607L are electrically identical. Features n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.4A (VGS=-10V) RDS(ON) RDS(ON) < 56m Ω (VGS=10V) < 105mΩ (VGS =-10V) < 77m Ω (VGS=4.5V) < 135mΩ (VGS =-4.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -60 ±20 -3.4 -2.7 -20 2.5 1.6 -55 to 150 Typ 37 74 28 35 73 32 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD ±20 4.7 3.8 20 2.5 1.6 -55 to 150 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch W °C TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Ma...