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AOP800 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP800 uses ...
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AOP800 Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOP800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP800 is Pb-free (meets ROHS & Sony 259 specifications). AOP800L is a Green Product ordering option. AOP800 and AOP800L are electrically identical.
Features
VDS (V) = 30V ID = 9.3A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
1 2 3 4
8 7 6 5
G1 S1
G2 S2
PDIP-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 30 ±20 9.3 7.5 40 2.5 1.6 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 40 67 33
Max 50 80 40
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AOP800
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Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=10V, VDS=5V VGS=10V, I D=9.3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VG...