AOP802

www.DataSheet4U.com AOP802 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AOP802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP802 is Pb-free (meets ROHS & Sony 259 specifications). AOP802L is a Green Product ordering option. AOP802 and AOP802L are electrically identical. Features VDS (V) = 60V ID = 7.9A (VGS = 10V) RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 1 2 3 4 8 7 6 5 G1 S1 G2 S2 PDIP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 60 ±20 7.9 6.3 40 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 30 66 25 Max 40 85 35 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOP802 www.DataSheet4U.com Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=48V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=10V, VDS=5V VGS=10V, I D=7.9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=...