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AOP806 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP806 uses ...
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AOP806 Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOP806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOP806 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 75V ID = 3.4A (VGS = 10V) RDS(ON) < 132mΩ (VGS = 10V) RDS(ON) < 168mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
1 2 3 4
8 7 6 5
G1 S1
G2 S2
PDIP-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation Avalanche Current B
B
Symbol VDS VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTG
Maximum 10 Sec Steady State 75 ±25 3.4 2.7 15 2.5 1.6 10 15 -55 to 150 1.6 1 2.7 2.1
Units V V A
W A mJ °C
Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s
Steady-State Steady-State
RθJA RθJL
Typ 40 67 33
Max 50 80 40
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOP806
www.DataSheet4U.com
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=75V, VGS=0V TJ=55°C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS...