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GM3055

GTM CORPORATION

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com GM3055 Description 1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET The SOT-89 package is universally ...



GM3055

GTM CORPORATION


Octopart Stock #: O-663768

Findchips Stock #: 663768-F

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Description
www.DataSheet4U.com GM3055 Description 1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Operating Junction Temperature Range Storage Temperature Range Drain - Source Voltage Gate - Source Voltage Continuous Drain Current ,VGS@10V Continuous Drain Current ,VGS@10V Pulsed Drain Current 1 Symbol Tj Tstg VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 Ratings -55 ~+150 -55 ~ +150 30 ±20 15 9 50 15 Unit V V A A A W Total Power Dissipation Thermal Data Symbol Rthj-case Rthj-amb parameter Thermal Resistance junction-case Thermal Resistance junction-ambient Max. Max. Value 3 42 Unit /W /W Source –Drain Diode Symbol Is ISM VsD Parameter Continuous source Current (Body Diode) Pulsed Source Current(Body Diode) Forward On Voltage 2 1 Test Conditions VD=VG=0V, VS=1.3V Tj=25 ,Is=15A,V GS=0V Min. - Typ. - Max. 15 50 1.3 Units A A V www.DataSheet4U.com 2/6 Notes: 1. 2. Pulse width limited by safe operating area. Pulse width 300us, duty cycle 2%. Electrical Characteristics @Tj = 25 Symbol BVDss Parameter Drain – Source Breakdown Voltage (unless o...




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