N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/09/14 www.DataSheet4U.com REVISED DATE :
G L A2 N 7 0
N-CHANNEL ENHANCEMENT M...
Description
Pb Free Plating Product
ISSUED DATE :2005/09/14 www.DataSheet4U.com REVISED DATE :
G L A2 N 7 0
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
675V 10 0.2A
Description
The GLA2N70 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching
Features
Package Dimensions SOT-223
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@5V Continuous Drain Current, VGS@5V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
2
Ratings 675 30 0.2 0.13 0.5 1.13 0.01 0.5 1 0.5 -55 ~ +150
Unit V V A A A W W/ mJ A mJ
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAS IAR EAR Tj, Tstg
Thermal Data
Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-a Value 110 Unit /W
GLA2N70
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ISSUED DATE :2005/09/14 www.DataSheet4U.com REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. 675 2.0 Typ. 0.52 0.4 5.5 1.9...
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