FKP280A

N-Channel MOS FET FKP280A September, 2005 ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Package---FM100(TO3P Full Mold) ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Designs ew Ｇ(1) Ｄ(2) or N Ｓ(3) ed f ■Absolute maximum ratings end Parameter m Drain to Source Voltage m Gate to Source Voltage o Continuous Drain Current ec Pulsed Drain Current R Maximum Power Dissipation ot Single Pulse Avalanche Energy N Avalanche Current Symbol VDSS VGSS ID ID(pulse) *1 PD EAS *2 IAS (Ta=25°C) Rating Unit 280 Ｖ ±30 Ｖ ±40A Ａ ±160A Ａ 85 (Tc=25°C) Ｗ 400 ｍＪ 40 Ａ Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to +150 °C *1. PW ≤ 100 μsec, duty cycle ≤ 1% *2. VDD=20V, L=460μH, ILp=40A, unclamped, RG=50Ω, See Fig.1 Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/9 T02-001EA-050912 N-Channel MOS FET FKP280A September, 2005 Electrical characteristics (Ta=25°C) Limits Parameter Symbol Test Conditions Unit Drain to Source breakdown Voltage Gate to Source Leakage Current Drain to Source Leakage Current V(BR)DSS IGSS IDSS ID=100μA,VGS=0V VGS=±30V VDS=280V, VGS=0V MIN. TYP. MAX. s 280 ign±100 Des 100 V nA μA Gate Threshold Voltage ew Forward Transconductance r N Static Drain to Source On-Resistance fo Input Capacitance ed Output Capacitance nd Reverse Transfer Capacitance me Turn-On Delay Time m Rise Time eco Turn-Off Delay Time R Fall Time Not Source-Drain Diod...