TPCP8001-H

TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) www.DataSheet4U.com TPCP8001-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 3.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.) High forward transfer admittance: |Yfs| = 16 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) S Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 Maximum Ratings (Ta = 25°C) 1．Source 5．Drain 6．Drain 7．Drain 8．Drain 0.28 +0.1 -0.11 Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Rating 30 30 ±20 7.2 28.8 1.68 Unit V V V A 2．Source 3．Source 4．Gate JEDEC JEITA TOSHIBA ― ― 2-3V1K Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation Weight: 0.017 g (typ.) W Circuit Configuration 8 7 6 5 Drain power dissipation 0.84 W Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range 33.6 7.2 0.066 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 4 Note: For ...