TPCP8006

TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) www.DataSheet4U.com TPCP8006 Notebook PC Applications Portable Equipment Applications 0.33 ± 0.05 Unit: mm 8 0.05 M Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA) 0.475 A 5 2.4 ± 0.1 2.8 ± 0.1 0.05 A M 1 0.65 2.9 ± 0.1 4 B B 0.8 ± 0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Rating 20 20 ±12 9.1 36.4 1.68 W Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range PD EAS IAR EAR Tch Tstg 0.84 21.5 9.1 0.168 150 −55 to 150 mJ A mJ °C °C Unit V V V A S 0.025 S 0.17 ± 0.02 ＋0.1 0.28 －0.11 ＋0.13 1.12 －0.12 ＋0.13 1.12 －0.12 0.28 ＋0.1 －0.11 1,2,3 ：SOURCE 4 ：GATE 5,6,7,8：DRAIN Drain power dissipation (t = 5 s) (Note 2a) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3V1K Weight: 0.017g(typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature...