TPCP8103-H

TPCP8103-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII) www.DataSheet4U.com TPCP8103-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 6.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 31 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = -40V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA) 1．Source 2．Source 3．Source 4．Gate 5．Drain 6．Drain 7．Drain 8．Drain S Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Tc=25℃) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating -40 -40 ±20 -4.8 -19.2 1.68 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-3V1K Weight: 0.017 g (typ.) Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation W Circuit Configuration 8 7 6 5 Drain power dissipation 0.84 W Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 10.7 -4.8 0.09 150 −55 to 150 ...