TPCP8201

TPCP8201 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCP8201 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications Lead(Pb)-Free Low drain-source ON resistance : RDS (ON) = 38 mΩ (typ.) High forward transfer admittance :|Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 10 µA (VDS = 30 V) Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 B A 0.65 2.9±0.1 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 1.12 -0.12 +0.13 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 30 30 ±20 4.2 16.8 1.48 1.23 W 0.58 0.36 2.86 2.1 0.12 150 −55~150 mJ A mJ °C °C Unit V V V A 1．Source1 2．Gate1 3．Source2 4．Gate2 5．Drain2 6．Drain2 7．Drain1 8．Drain1 1.12 +0.13 -0.12 0.28 +0.1 -0.11 JEDEC JEITA TOSHIBA ― ― 2-3V1G Drain power dissipation (t = 5 s) (Note 2a) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operatio...