TPCP8510

TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 TPCP8510 High-Speed, High-Voltage Switching Applications DC-DC Converter Applications High DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 0.2 μs (typ) 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 2.8±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 0.475 1 4 0.65 2.9±0.1 B 0.05 M B A 0.8±0.05 Collector-base voltage VCBO 180 V Collector-emitter voltage VCEX 150 V VCEO 120 V Emitter-base voltage VEBO 7 V DC (Note 1) IC Collector current Pulse (Note 1) ICP 1.0 A 2.0 Base current IB 0.1 A Collector power dissipation t = 10s DC 2.25 PC (Note 2) 1.1 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: Please use devices on condition that the junction temperature is below 150°C. S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 1.12+-00..1132 1.12+-00..1132 0.28 +0.1 -0.11 1.Emitter 2.Emitter 3.Emitter 4.Base 5.Collector 6.Collector 7.Collector 8.Collector JEDEC ― JEITA ― TOSHIBA 2-3V1Q Weight: 0.017 g (typ.) Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating co...