TPCP8603

TPCP8603 TOSHIBA Transistor Silicon PNP Epitaxial Type www.DataSheet4U.com TPCP8603 High-Speed Switching Applications DC/DC Converters Strobe Applications High DC current gain: hFE = 120～300 (IC = −0.1 A) Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) High-speed switching: tf = 120 ns (typ.) 0.475 1 4 Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.65 2.9±0.1 B A 0.05 M B Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-vase voltage Collector-emitter voltage Collector-emitter voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10 s DC DC (Note 1) Symbol VCBO VCEO VEBO IC ICP IB PC (Note 2) Tj Tstg Rating −120 −120 −7 −1.0 −2.0 0.1 3.00 1.25 150 −55~150 Unit V V V A A A W W °C °C S 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 Pulsed (Note 1) 2. Collector Collector 3. Collector 4. Base 1. Emitter Collector 7. Collector 8. Collector 5. 6. JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3V1A Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Mounted on the FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) Weight: 0.017 g (typ.) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op...