TPCP8H01

TPCP8H01 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type www.DataSheet4U.com TPCP8H01 2.4±0.1 0.475 1 4 ・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive ・High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor) ・Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max) (NPN transistor) ・High-speed switching: tf = 25 ns (typ.) (NPN transistor) 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 Absolute Maximum Ratings (Ta = 25°C) Transistor Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (NPN) Junction temperature DC (Note 1) Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note 2) Tj Rating 100 80 50 6 5.0 7.0 0.5 1.0 150 Unit V V V A A W °C 1. SOURCE 2. COLLECTOR 3. COLLECTOR 4. COLLECTOR 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 5. BASE 6. EMITTER 7. GATE 8. DRAIN JEDEC JEITA TOSHIBA 2-3V1E Pulse (Note 1) Weight : 0.017g (Typ.) Circuit Configuration 8 7 6 5 MOS FET Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Channel Temperature DC Pulse Symbol VDSS VGSS ID IDP Tch Rating 20 ±10 100 200 150 Unit V V mA °C 1 2 3 4 Note 1: Ensure that the junction (channel) temperature does not exceed 150℃. Note 2: Device mounted on a glass-epoxy board (FR-4, 25.4×25.4×1.6 mm, Cu area: 645 mm2) Note 3:...