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CMT4410

Champion Microelectronic Corporation

N-Channel MOSFET

CMT4410 N-CHANNEL 30V MOSFET www.DataSheet4U.com STRUCTURE ! FEATURES ! ! ! Silicon N-channel MOSFET Low Qg Low on-...


Champion Microelectronic Corporation

CMT4410

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CMT4410 N-CHANNEL 30V MOSFET www.DataSheet4U.com STRUCTURE ! FEATURES ! ! ! Silicon N-channel MOSFET Low Qg Low on-resistance Excellent resistance to damage from static electricity PIN CONFIGURATION 8-PIN SOP (S08) SYMBOL D R AIN Top View 1 2 3 4 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN 8 7 6 5 G AT E * SOURCE N-Channel MOSFET * Gate Protection Diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltage are exceeded. ORDERING INFORMATION Part Number CMT4410 Package 8-PIN SOP (S08) ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) Rating Drain-to-Source Voltage Drain to Current - Continuous (at 25℃) - Pulsed* Reverse Drain to Current - Continuous (at 25℃) - Pulsed* Source Current (Body Diode) - Continuous (at 25℃) - Pulsed* Gate-to-Source Voltage - Continue Total Power Dissipation (TC = 25℃) Storage Temperature Range Channel Temperature * Pw≦10ms, Duty cycle≦1% Symbol VDS ID IDP IR IDRP IS ISP VGS PD TSTG Tch Value 30 10 40 10 40 1.3 5.2 ±20 2.0 -55 to 150 150 V W ℃ ℃ A A Unit V A 2001/06/18 Draft Champion Microelectronic Corporation Page 1 CMT4410 N-CHANNEL 30V MOSFET www.DataSheet4U.com THERMAL RESISTANCE (Ta = 25℃) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit ℃/W ELECTRICAL CHARACTERISTICS Unless otherwise specified, Ta = 25℃. CMT4410 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 1mA) Zero Gate Voltag...




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