MTN7002S3

CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C325S3 www.DataSheet4U.com Issued Date : 2005.06.15 Revised Date : Page No. : 1/4 MTN7002S3 Description The MTN7002S3 is a N-channel enhancement-mode MOSFET. Pb-free package Symbol MTN7002S3 Outline SOT-323 D G G：Gate S：Source D：Drain S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source Voltage Continuous Drain Current (Ta=25°C) Continuous Drain Current (Ta=100°C) Pulsed Drain Current (Ta=25°C) Total Power Dissipation (Ta=25°C) Total Power Dissipation (Tc=25°C) Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Lead Temperature, for 10 second Soldering *2. Pulse Width ≤ 300µs, Duty cycle ≤2% MTN7002S3 CYStek Product Specification Symbol BVDSS BVDGR VGS ID ID IDM PD Tj Tstg Rth,ja Rth,jc TL Limits 60 60 ±40 200 115 800 200 400 -55~+150 -55~+150 625 250 240 *1 *1 *2 Unit V V V mA mA mA mW °C °C °C/W °C/W °C Note : *1. The power dissipation of the package may result in a continuous drain current CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Symbol BVDSS VGS(th) IGSS/F IGSS/R IDSS ID(ON) VDS(ON) RDS(ON) GFS Ciss Coss Crss Min. 60 1 500 80 Typ. Max. 2.5 100 -100 1 0.375 3.75 7.5 7.5 50 25 5 Unit V V nA nA µA mA V V Ω mS pF Spec. No. : C325S3 www.DataSheet4U.com Issued Date : 2005.06.15 Revised Date : Page No. : 2/4 Test Conditions VGS=0, ID=10µA VDS=2.5V, ID=0.25...