2N7000KL/BS170KL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
2 at VGS = 10 V 60...
2N7000KL/BS170KL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
2 at VGS = 10 V 60
4 at VGS = 4.5 V
VGS(th) (V) 1.0 to 2.5
ID (A) 0.47 0.33
FEATURES TrenchFET® Power MOSFET
ESD Protected: 2000 V
APPLICATIONS Direct Logic-Level Interface: TTL/CMOS
Pb-free Available
RoHS*
COMPLIANT
Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,
Transistors, etc.
Battery Operated Systems
TO-226AA
TO-92-18RM
(TO-92)
(TO-18 Lead Form)
D
S
1
G
2
D
3
Device Marking Front View
“S” 2N 7000KL
xxyy
“S” = Siliconix Logo xxyy = Date Code
D
1
G
2
S
3
Device Marking
Front View
100
“S” BS
G
170KL
xxyy
“S” = Siliconix Logo xxyy = Date Code
Top View
Top View
S
Ordering Information: 2N7000KL-TR1
Ordering Information: BS170KL-TR1
2N7000KL-TR1-E3 (Lead (Pb)-free)
BS170KL-TR1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta
Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range
TA = 25 °C TA = 70 °C
TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM
PD
RthJA TJ, Tstg
Notes: a. Pulse width limited by maximum junction temperature.
Limit 60 ± 20 0.47 0.37 1.0 0.8 0.51 158
- 55 to 150
Unit V
A
W °C/W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72705 S-72202-Rev...