2N7000KL

2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 2 at VGS = 10 V 60 4 at VGS = 4.5 V VGS(th) (V) 1.0 to 2.5 ID (A) 0.47 0.33 FEATURES TrenchFET® Power MOSFET ESD Protected: 2000 V APPLICATIONS Direct Logic-Level Interface: TTL/CMOS Pb-free Available RoHS* COMPLIANT Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. Battery Operated Systems TO-226AA TO-92-18RM (TO-92) (TO-18 Lead Form) D S 1 G 2 D 3 Device Marking Front View “S” 2N 7000KL xxyy “S” = Siliconix Logo xxyy = Date Code D 1 G 2 S 3 Device Marking Front View 100 “S” BS G 170KL xxyy “S” = Siliconix Logo xxyy = Date Code Top View Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM PD RthJA TJ, Tstg Notes: a. Pulse width limited by maximum junction temperature. Limit 60 ± 20 0.47 0.37 1.0 0.8 0.51 158 - 55 to 150 Unit V A W °C/W °C * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72705 S-72202-Rev...