2N7000P

-. —. —-..-.. .,, ...— “,.. . . .- N-CHANNEL ISSUE 2MARCH ENHANCEMENT MODE VERTICAL DMOS FET 94 FEATURES * *R 60 Volt VcEo 0S(0.) = 5 ‘2 2N7000P I www.DataSheet4U.com D G s v ABSOLUTE MAXIMUM PARAMETER Drain-Source Continuous Pulsed Voltage Drain Current RATINGS. SYMBOL ‘DS at Tamb=250C ID ——+— lDM ‘GS — — lJ&h!sJ VALUE 60 200 ~ ‘– UNIT v — mA mA v Drain Current–Voltage at Tamb=250C Temperature —— Range ’500 i 40 Gate-Source Power Dissipation Ptot Ti:T~tg -1 ---–2A. mW -55to +150 \ “c ~ Operating and Storage PARAMETER Drain-Source Voltage Gate-Source —Gate-Body Breakdown SYMBOL BVDss MIN. 60 MAX. UNIT v CONDITIONS. ID=l OIA, VGsOV .— VGs Threshold Leakage Voltage — ‘GS(th) lGSS _ 0.8 3 10 1 1 v nA-UA mA — mA lD=lmA, - ‘“ vG@ VD= 15V, vD~=ov Zero Gate Voltege ————. Drain Current lD~s q+f 75 On-State ——-.— — .—— ~~ Drain Current(1) —.— .—— On-State VD~48V, VDs48V, VDSIOV, VG~O VG~OV, VGF4.5V T=125°C(2) ID(m) Static Drain-Source Voltage (1) Static Drain-Source Resistance (1) ‘DS(on) RDs& ~ 2.5 0.4 5 T V v ‘; “- VGs.=10V,lD.500mA On-State ;;~;;;$;%--– 1’ (2) __, _ Output 1 (2) c,,, input Capacitance ——. .——. ——— Common Source Capacitance (2) ‘Reve;se Transfer AL-P–E.-.; c 0ss ~ —. —-— Capacitance I 25 I pF -4 VD-725V, VGs:OV, f= 1MHz pF —— ——— — --–— TurmOn Time (2)(3) 10 ns \ VDD=15V, lD=500mA ‘(on) ~ Rg=25Q, RL=25Q Turn-Off Time (2)(3) 10 ns Voff) I ) Measured under pulsed conditions. Width=300ps. Duty cycl...