STU405DH

www.DataSheet4U.com S T U405DH S amHop Microelectronics C orp. Nov,20 2007 ver1.0 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 40V P R ODUC T S UMMAR Y (P -C hannel) V DS S -40V ID 11A R DS (ON) ( m Ω ) Max ID - 9A R DS (ON) ( m Ω ) Max 33 @ V G S = 10V 45 @ V G S = 4.5V D1 D1/D2 45 @ V G S = -10V 65 @ V G S = -4.5V D2 S1 G1 S2 G2 TO-252-4L G1 S1 N-ch G2 S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage 25 C Drain C urrent-C ontinuous @ Tc -P ulsed a S ymbol V DS V GS ID IDM IS Tc= 25 C PD Tc= 70 C N-C hannel P-C hannel 40 20 11 9 45 7 11 7.7 -40 20 -9 -7 -36 -6 Unit V V A A A A 70 C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange W C T J , T S TG -55 to 175 THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 13.6 120 C /W C /W www.DataSheet4U.com S T U405DH N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS b Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 6A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 8A Min Typ C Max Unit 40 1 V uA 100 nA 1 1.5 24 30 20 13.8 580 3 33 45 V m oh...