STU409DH

S T U409DH S amHop Microelectronics C orp. www.DataSheet4U.com May 29 2007 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 40V P R ODUC T S UMMAR Y (P -C hannel) V DS S -40V ID 18A R DS (ON) ( m W ) Max ID -14A R DS (ON) ( m W ) Max 24 @ V G S = 10V 30 @ V G S = 4.5V D1 35 @ V G S = -10V 50 @ V G S = -4.5V D2 D1/D2 G1 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc -P ulsed a S ymbol V DS V GS 25 C 70 C ID IDM IS Tc= 25 C Tc= 70 C PD T J , T S TG N-C hannel P-C hannel 40 20 18 15 50 8 11 7.7 -55 to 175 -40 20 -14 -11 -50 -6 Unit V V A A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 13.6 120 C /W C /W S T U409DH Parameter 5 www.DataSheet4U.com N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS b Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 6A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 8A Min Typ C Max Unit 40 1 10 1 1.8 18 23 20 17 700 120 75 3 V uA uA V OFF CH...