STU40N2LH5

www.DataSheet4U.com STD40N2LH5 STU40N2LH5 N-channel 25 V, 0.01 Ω , 40 A, DPAK, IPAK STripFET™ V Power MOSFET Preliminary Data Features Type STD40N2LH5 STU40N2LH5 ■ ■ ■ ■ ■ VDSS 25 V 25 V RDS(on) max 0.012 Ω 0.0126 Ω ID 40 A 40 A 3 3 2 1 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses 1 DPAK IPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Marking 40N2LH5 40N2LH5 Package DPAK IPAK Packaging Tape and reel Tube Order codes STD40N2LH5 STU40N2LH5 September 2008 Rev 2 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings www.DataSheet4U.com STD40N2LH5 - STU40N2LH5 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Gate-Source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 25 ± 22 40 28 160 35 0.2...