2SK3481

DATA SHEET MOS FIELD EFFECT www.DataSheet4U.com TRANSISTOR 2SK3481 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3481 2SK3481-S 2SK3481-ZJ 2SK3481-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) Low Ciss: Ciss = 2300 pF TYP. Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage Drain Current (pulse) (VDS = 0 V) Drain Current (DC) (TC = 25°C) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 100 ±20 ±30 ±60 56 1.5 150 –55 to +150 26 68 V V A A W W °C °C A mJ (TO-263, TO-220SMD) (TO-262) Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 (TA = 25°C) IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.23 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types ...