DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3482
SWITCHING N-CHANNEL POWER MOS FET
www.DataSheet4U.com
DESCRIPTION
The...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3482
SWITCHING N-CHANNEL POWER MOS FET
www.DataSheet4U.com
DESCRIPTION
The 2SK3482 is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3482 2SK3482-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss: Ciss = 3600 pF TYP. Built-in gate protection diode TO-251/TO-252 package (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
100 ±20 ±36 ±100 50 1.0 150 –55 to +150 30 90
V V A A W W °C °C A mJ (TO-252)
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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Document No. D15064EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan
The ...