2SK3489

Ordering number : EN7316A 2SK3489 www.DataSheet4U.com N-Channel Silicon MOSFET 2SK3489 Features General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2×0.8mm) Tc=25˚C Conditions Ratings 30 ±20 8 32 1.5 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS= ±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4A ID=4A, VGS=10V ID=2A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ±10 1.2 3.5 5.1 37 63 460 95 75 10 12.5 31 19 48 88 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : LF Continued on next page. Any and all SANY...