128K X 8 CMOS FLASH MEMORY
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W29C010 128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C010 is a 1-megabit, 5-volt only CMOS...
Description
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W29C010 128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29C010 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C010 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations Fast page-write operations Low power consumption
− 128 bytes per page − Page program cycle: 10 mS (max.) − Effective byte-program cycle time: 39 µS − Optional software-protected data write
Fast chip-erase operation: 50 mS Read access time: 45/70/90 nS Typical page program/erase cycles: 1K/10K Ten-year data retention Software and hardware data protection
− Active current: 25 mA (typ.) − Standby current: 20 µA (typ.)
Automatic program timing with internal VPP
generation
End of program detection
− Toggle bit − Data polling
Latched address and data TTL compatible I/O JEDEC standard byte-wide pinouts Available packages: 32-pin 600 mil DIP, 450
mil SOP, TSOP and PLCC
-1-
Publication Release Date: April 1997 Revision A1
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W29C010
PIN CONFIGURATIONS BLOCK DIAGRAM
NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13...
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