Switching Applications. SFT1101 Datasheet

SFT1101 Applications. Datasheet pdf. Equivalent

SFT1101 Datasheet
Recommendation SFT1101 Datasheet
Part SFT1101
Description PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
Feature SFT1101; Ordering number : ENA1166 SFT1101 www.DataSheet4U.com SANYO Semiconductors DATA SHEET SFT1101 Ap.
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Datasheet
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Sanyo Semicon Device SFT1101
Ordering number : ENA1166
SFT1101
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
SFT1101 PNP Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Applications
DC / DC converters, relay drivers, lamp drivers, motor drivers.
Features
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Marking : T1101
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
--120
--120
--120
--7
--2.5
--4
--500
1
15
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73008EA TI IM TC00001472 No. A1166-1/4



Sanyo Semicon Device SFT1101
SFT1101
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--80V, IE=0A
VEB=--5V, IC=0A
VCE=--5V, IC=--100mA
VCE=--10V, IC=--100mA
VCB=--10V, f=1MHz
IC=--1A, IB=--100mA
IC=--1A, IB=--100mA
IC=--10μA, IE=0A
IC=--100μA, RBE=0Ω
IC=--1mA, RBE=
IE=--10μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Package Dimensions
unit : mm (typ)
7518-003
Package Dimensions
unit : mm (typ)
7003-003
6.5 2.3
5.0 0.5
4
6.5
5.0
4
www.DataSheet4U.com
Ratings
min typ
200
--120
--120
--120
--7
75
21
--150
--0.85
55
840
40
max
--1
--1
560
--270
--1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
V
ns
ns
ns
2.3
0.5
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT
IB1
IB2
VR RB
50Ω +
220μF
OUTPUT
+
470μF
RL
VBE=5V
VCC= --60V
IC= --10IB1=10IB2= --0.7A
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
No. A1166-2/4



Sanyo Semicon Device SFT1101
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
--3.0
--2.5
--2.0
SFT1101
IC -- VCE
--250mA
--200mA
--160mA
--120mA
--80mA
--60mA
--40mA
--100mA --20mA
--10mA
--5mA
IB=0mA
--0.1
--0.2
--0.3
--0.4
--0.5
Collector-to-Emitter Voltage, VCE -- V IT13510
IC -- VBE
VCE= --5V
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1000
7
5
3
2
IC -- wVwCwE.DataSheet4U.com
--120mA
--100mA
--80mA
--60mA
--40mA
--250--m2A00mA--160mA
--20mA
--10mA
--5mA
--2mA
--1mA
IB=0mA
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE -- V IT13511
hFE -- IC
VCE= --5V
Ta=75°C
25°C --25°C
--1.5
--1.0
--0.5
0
0
3
2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V
fT -- IC
IT13512
VCE= --10V
100
7
5
100
7
5
3
2
10
--0.01
2
23
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
Cob -- VCB
23 5
IT13513
f=1MHz
100
7
5
3
2
3
2
--0.01
23
5 7 --0.1
23
Collector Current, IC -- A
VCE(sat) -- IC
7
5 IC / IB=10
3
2
5 7 --1.0
IT13514
--0.1
7
5
3
2
--0.01
--0.01
25°C
Ta=75°C
--25°C
2 3 5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
23 5
IT13516
10
7
5
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100
Collector-to-Base Voltage, VCB -- V IT13515
VBE(sat) -- IC
3
IC / IB=10
2
--1.0
Ta= --25°C
7
5 75°C
25°C
3
2
--0.01 2 3
5 7 --0.1 2 3 5 7 --1.0
Collector Current, IC -- A
23 5
IT13517
No. A1166-3/4







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