SFT1427

Ordering number : ENA1560 SFT1427 www.DataSheet4U.com SANYO Semiconductors DATA SHEET SFT1427 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 80 ±20 7 28 1.0 15 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=80V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=3.5A ID=3.5A, VGS=10V ID=3.5A, VGS=4.5V ID=3.5A, VGS=4V 1.2 3.3 5.5 51 62 67 66 87 94 Ratings min 80 1 ±10 2.6 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : T1427 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any...