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CY7C1411AV18 Dataheets PDF



Part Number CY7C1411AV18
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description (CY7C14xxAV18) 36-Mbit QDR-II SRAM 4-Word Burst Architecture
Datasheet CY7C1411AV18 DatasheetCY7C1411AV18 Datasheet (PDF)

CY7C1411AV18, CY7C1426AV18 www.DataSheet4U.com CY7C1413AV18, CY7C1415AV18 36-Mbit QDR™-II SRAM 4-Word Burst Architecture Features ■ Functional Description The CY7C1411AV18, CY7C1426AV18, CY7C1413AV18, and CY7C1415AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to support the read operations and the write port has dedicated data inputs to support.

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CY7C1411AV18, CY7C1426AV18 www.DataSheet4U.com CY7C1413AV18, CY7C1415AV18 36-Mbit QDR™-II SRAM 4-Word Burst Architecture Features ■ Functional Description The CY7C1411AV18, CY7C1426AV18, CY7C1413AV18, and CY7C1415AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to support the read operations and the write port has dedicated data inputs to support the write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common IO devices. Access to each port is through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II read and write ports are completely independent of one another. To maximize data throughput, read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C1411AV18), 9-bit words (CY7C1426AV18), 18-bit words (CY7C1413AV18), or 36-bit words (CY7C1415AV18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds.” Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on chip synchronous self-timed write circuitry. Separate independent read and write data ports ❐ Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches Echo clocks (CQ and CQ) simplify data capture in high-speed systems Single multiplexed address input bus latches address inputs for both read and write ports Separate port selects for depth expansion Synchronous internally self-timed writes Available in x8, x9, x18, and x36 configurations Full data coherency, providing most current data Core VDD = 1.8 (±0.1V); IO VDDQ = 1.4V to VDD Available in 165-Ball FBGA package (15 x 17 x 1.4 mm) Offered in both Pb-free and non Pb-free packages Variable drive HSTL output buffers JTAG 1149.1 compatible test access port Delay Lock Loop (DLL) for accurate data placement ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Configurations CY7C1411AV18 – 4M x 8 CY7C1426AV18 – 4M x 9 CY7C1413AV18 – 2M x 1.


CY7C1413AV18 CY7C1411AV18 CY7C1426AV18


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