SI4684DY

Si4684DY New Product www.DataSheet4U.com Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0094 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a 16 14 Qg (Typ) 14 nC FEATURES Extremely Low Qgd WFET® Technology for Low Switching Losses TrenchFET® Power MOSFET 100 % Rg Tested RoHS COMPLIANT APPLICATIONS High-Side DC/DC Conversion - Notebook - Server SO-8 D S S S G 1 2 3 4 Top View Ordering Information: Si4684DY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 12 16 12.9 12b,c 9.5b,c 50 4.0 2.3b,c 20 20 4.45 2.85 2.50b,c 1.6b,c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb,d t ≤ 10 sec Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under Steady State conditions is 90 °C/W. Document Number: 73324 S-61013-Rev. B, 12-Jun-06 www.vishay.com 1 Symbol RthJA RthJF Typical 36...