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STPSC406
600 V power Schottky silicon carbide diode
Features
■ ■ ■
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode
K
A K
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
TO-220AC STPSC406D
K
A NC
DPAK STPSC406B
Table 1.
Device summary
IF(AV) VRRM Tj (max) QC (typ) 4A 600 V 175 °C 3 nC
September 2009
Doc ID 16283 Rev 1
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Characteristics
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STPSC406
1
Characteristics
Table 2.
Symbol VRRM IF(RMS) IF(AV)
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current DPAK, Tc = 110 °C, δ = 0.5 TO-220AC, Tc = 95 °C, δ = 0.5 tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C Value 600 11 4 14 10 40 14 -55 to +175 -40 to +175 Unit
V A A
IFSM
A
IFRM Tstg Tj
1.
Repetitive peak forward DPAK, Tc = 115 °C, Tj = 150 °C, δ = 0.1 current TO-220AC, Tc = 105 °C, Tj = 150 °C, δ = 0.1 Storage temperature range Operating junction temperature(1)
A
°C °C
1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj
Table 3.
Symbol Rth(j-c)
Thermal resistance
Parameter T0-220AC Junction to case DPAK 4.5 Value 5.5 °C/W Unit
Table 4.
Symbol IR (1) VF (2)
Static electrical characteristics
Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM Min. IF = 4 A Typ. 10 60 1.55 1.9 Max. 50 µA 500 1.9 V 2.4 Unit
1. tp = 10 ms, δ < 2% 2. tp = 500 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 1.20x IF(AV) + 0.3 x IF2(RMS) Table 5.
Symbol Qc C
Other parameters
Parameter Total capacitive charge Test conditions Vr = 400 V, IF = 4 A dIF/dt = -200 A/µs Tj = 150 °C Vr = 0 V, Tc = 25 °C, F = 1 Mhz Vr = 400 V, Tc = 25 °C, F = 1 Mhz Typ. 3 200 pF 20 Unit nC
Total capacitance
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STPSC406
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Characteristics
Figure 1.
Forward voltage drop versus forward current (typical values)
Figure 2.
Reverse leakage current versus reverse voltage applied (maximum values)
8 7
IFM(A)
IR(µA)
1.E+04
Tj=175 °C
1.E+03
6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Tj=25 °C Tj=150 °C Tj=175 °C
1.E+02
Tj=150 °C
1.E+01
1.E+00
Tj=25 °C
VFM(V)
1.E-01
VR(V)
1.E-02 0 50 100 150 200 250 300 350 400 450 500 550 600
Figure 3.
35 30
Peak forward current versus case temperature (TO-220AC)
T
Figure 4.
IM(A)
δ=0.1
Peak forward current versus case temperature (DPAK)
T
IM(A)
35 30
δ=0.1
δ=tp/T
25 20
δ=0.3
tp
δ=tp/T
25 20 15 10
δ=0.3 δ=0.5
tp
15 10 5 0 0
δ=0.5
δ=1 d=1
δ=0.7 d=0.7
5
δ=1 d=1
δ=0.7 d=0.7
TC(°C)
0
TC(°C)
100 125 150 175
0 25 50 75 100 125 150 175
25
50
75
Figure 5.
Junction capacitance versus reverse voltage applied (typical values)
Figure 6.
Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC)
C(pF)
150
F=1 MHz VOSC=30 mVRMS Tj=25 °C
1.0 0.9 0.8 0.7 0.6
Zth(j-c)/Rth(j-c)
125
100
75
0.5 0.4
50
0.3 0.2
25
VR(V)
0 1 10 100 1000
0.1 0.0
Single pulse
tp(s)
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
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Characteristics
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STPSC406
Figure 7.
Relative variation of thermal impedance junction to case versus pulse duration (DPAK)
Figure 8.
Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform)
Zth(j c)/Rth(j c)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Single pulse
1.E+03
IFSM(A)
1.E+02
T c =25 °C
1.E+01
T c =125 °C
tp(s)
1.E+00 1.E-05 1.E-04 1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
Figure 9.
Total capacitive charges versus dIF/dt (typical values)
QC(nC)
7 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF=4 A VR=400 V Tj=150 °C
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STPSC406
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2
Package information
● ● ●
Epoxy meets UL94, V0 Cooling method: convection (C) Recommended torque: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-220AC dimensions
Dimensions Ref. Millimeters Min. A
H2 ØI L5 L7 C A
Inches Min. 0.173 0.048 0.094.