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STPSC406 Dataheets PDF



Part Number STPSC406
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 600V power Schottky silicon carbide diode
Datasheet STPSC406 DatasheetSTPSC406 Datasheet (PDF)

www.DataSheet4U.com STPSC406 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off an.

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www.DataSheet4U.com STPSC406 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. TO-220AC STPSC406D K A NC DPAK STPSC406B Table 1. Device summary IF(AV) VRRM Tj (max) QC (typ) 4A 600 V 175 °C 3 nC September 2009 Doc ID 16283 Rev 1 1/8 www.st.com 8 Characteristics www.DataSheet4U.com STPSC406 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) Absolute ratings (limiting values at 25 °C unless otherwise specified) Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current DPAK, Tc = 110 °C, δ = 0.5 TO-220AC, Tc = 95 °C, δ = 0.5 tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C Value 600 11 4 14 10 40 14 -55 to +175 -40 to +175 Unit V A A IFSM A IFRM Tstg Tj 1. Repetitive peak forward DPAK, Tc = 115 °C, Tj = 150 °C, δ = 0.1 current TO-220AC, Tc = 105 °C, Tj = 150 °C, δ = 0.1 Storage temperature range Operating junction temperature(1) A °C °C 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Symbol Rth(j-c) Thermal resistance Parameter T0-220AC Junction to case DPAK 4.5 Value 5.5 °C/W Unit Table 4. Symbol IR (1) VF (2) Static electrical characteristics Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM Min. IF = 4 A Typ. 10 60 1.55 1.9 Max. 50 µA 500 1.9 V 2.4 Unit 1. tp = 10 ms, δ < 2% 2. tp = 500 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.20x IF(AV) + 0.3 x IF2(RMS) Table 5. Symbol Qc C Other parameters Parameter Total capacitive charge Test conditions Vr = 400 V, IF = 4 A dIF/dt = -200 A/µs Tj = 150 °C Vr = 0 V, Tc = 25 °C, F = 1 Mhz Vr = 400 V, Tc = 25 °C, F = 1 Mhz Typ. 3 200 pF 20 Unit nC Total capacitance 2/8 Doc ID 16283 Rev 1 STPSC406 www.DataSheet4U.com Characteristics Figure 1. Forward voltage drop versus forward current (typical values) Figure 2. Reverse leakage current versus reverse voltage applied (maximum values) 8 7 IFM(A) IR(µA) 1.E+04 Tj=175 °C 1.E+03 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Tj=25 °C Tj=150 °C Tj=175 °C 1.E+02 Tj=150 °C 1.E+01 1.E+00 Tj=25 °C VFM(V) 1.E-01 VR(V) 1.E-02 0 50 100 150 200 250 300 350 400 450 500 550 600 Figure 3. 35 30 Peak forward current versus case temperature (TO-220AC) T Figure 4. IM(A) δ=0.1 Peak forward current versus case temperature (DPAK) T IM(A) 35 30 δ=0.1 δ=tp/T 25 20 δ=0.3 tp δ=tp/T 25 20 15 10 δ=0.3 δ=0.5 tp 15 10 5 0 0 δ=0.5 δ=1 d=1 δ=0.7 d=0.7 5 δ=1 d=1 δ=0.7 d=0.7 TC(°C) 0 TC(°C) 100 125 150 175 0 25 50 75 100 125 150 175 25 50 75 Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC) C(pF) 150 F=1 MHz VOSC=30 mVRMS Tj=25 °C 1.0 0.9 0.8 0.7 0.6 Zth(j-c)/Rth(j-c) 125 100 75 0.5 0.4 50 0.3 0.2 25 VR(V) 0 1 10 100 1000 0.1 0.0 Single pulse tp(s) 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Doc ID 16283 Rev 1 3/8 Characteristics www.DataSheet4U.com STPSC406 Figure 7. Relative variation of thermal impedance junction to case versus pulse duration (DPAK) Figure 8. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) Zth(j c)/Rth(j c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Single pulse 1.E+03 IFSM(A) 1.E+02 T c =25 °C 1.E+01 T c =125 °C tp(s) 1.E+00 1.E-05 1.E-04 1.E-03 tp(s) 1.E-02 1.E-01 1.E+00 Figure 9. Total capacitive charges versus dIF/dt (typical values) QC(nC) 7 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) IF=4 A VR=400 V Tj=150 °C 4/8 Doc ID 16283 Rev 1 STPSC406 www.DataSheet4U.com Package information 2 Package information ● ● ● Epoxy meets UL94, V0 Cooling method: convection (C) Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-220AC dimensions Dimensions Ref. Millimeters Min. A H2 ØI L5 L7 C A Inches Min. 0.173 0.048 0.094.


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