STTH4R02

STTH4R02 Ultrafast recovery diode . $ $ $ . 60% . . 60& . 1& $ 1& '3$. $ Features  Negligible switching losses  High junction temperature  Very low conduction losses  Low forward and reverse recovery times  ECOPACK®2 compliant component for DPAK on demand Datasheet  production data Description The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DPAK, SMB and SMC, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection. Table 1. Device summary Symbol Value IF(AV) VRRM VF (typ) Tj (max) trr (typ) 4A 200 V 0.76 V 175 °C 16 ns November 2016 This is information on a product in full production. DocID12360 Rev 6 1/14 www.st.com 14 Characteristics 1 Characteristics STTH4R02 Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current DPAK SMB / SMC 200 10 70 IF(AV) IFSM Tstg Tj Average forward current, δ = 0.5, square wave Surge non repetitive forward current DPAK SMB / SMC tp = 10 ms sinusoidal Tc = 160 °C TL = 95 °C Storage temperature range Maximum operating junction temperature 4 70 -65 to +175 175 Unit V A A A °C °C Symbol Rth(j-c) Rth(j-l) Junction to case Junction to lead Table 3. Thermal parameters Parameter DPAK SMB / SMC Max. value Unit 3.5 °C/W 20 Table 4. Stati...