2STBN15D100

2STBN15D100 Low voltage NPN power Darlington transistor Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment Description The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration. TAB 3 1 D²PAK Figure 1. Internal schematic diagrams R1 = 8 kΩ R2 = 150 Ω Table 1. Device summary Order code 2STBN15D100T4 Marking BN15D100 Package D²PAK January 2010 Doc ID 16117 Rev 2 Packaging Tape and reel 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tcase = 25 °C Storage temperature Max. operating junction temperature Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case max. 2STBN15D100 Value Unit 100 V 100 V 5 V 12 A 15 A 0.2 A 70 W -65 to 150 °C 150 °C Value 1.8 Unit °C/W 2/7 Doc ID 16117 Rev 2 2STBN15D100 2 Electrical characteristics Electrical characteristics Tcase = 25 °C; unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions ICBO Collector cut-off current (IE = 0) VCB = 100 V ICEO Collector cut-o...