BULT3N4

www.DataSheet4U.com BULT3N4 Medium voltage fast-switching NPN power transistor Features ■ ■ ■ Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Application ■ Electronic ballast for fluorescent lighting 3 2 SOT-32 1 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the BULT3P3, its complementary PNP transistor. Figure 1. Internal schematic diagram Table 1. Device summary Marking BULT3N4 Package SOT-32 Packing Tube Order code BULT3N4 September 2009 Doc ID 16299 Rev 1 1/8 www.st.com 8 Electrical ratings www.DataSheet4U.com BULT3N4 1 Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 1.5 A, tp < 100 µs, Tj < 150°C) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 400 200 V(BR)EBO 3 6 1.5 3 32 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol RthJC Therma...