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PSMN013-100PS

NXP

N-channel 100V 13.9mOhm Standard Level MOSFET

PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. Rev. 02 — 22 January 2010 www.DataSheet4U.com Produ...


NXP

PSMN013-100PS

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PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. Rev. 02 — 22 January 2010 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for standard level gate drive 1.3 Applications „ DC-to-DC converters „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 68 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 15 and 14 VGS = 10 V; ID = 25 A; VDS = 50 V; see Figure 14 and 15 Typ Max 100 68 170 175 127 Unit V A W °C mJ drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD gate-drain charge 17 nC QG(tot) total gate charge - 59 - nC NXP Semiconductors PSMN013-100PS www.DataSheet4U.com N-channel 100V 13.9mΩ standard level MOSFET in TO220. Table 1. Quick reference …continued Conditions VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25...




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