2N7002CK

2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features I I I I Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.3 Applications I I I I Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS ID IDM RDSon Quick reference data Parameter drain-source voltage drain current peak drain current drain-source on-state resistance single pulse; tp ≤ 10 µs VGS = 10 V; ID = 500 mA Conditions Min Typ 1.1 Max 60 300 1.2 1.6 Unit V mA A Ω NXP Semiconductors www.DataSheet4U.com 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain 1 2 G Simplified outline 3 Graphic symbol D S 017aaa000 3. Ordering information Table 3. Ordering information Package Name 2N7002CK Description Version SOT23 TO-236AB plastic surface-mounted package; 3 leads Type number 4. Marking Table 4. 2N7002CK [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking codes Marking code[1] LP* Type number 2N7002CK_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 11 S...