PowerTrench MOSFET. FDFME3N311ZT Datasheet

FDFME3N311ZT Datasheet PDF, Equivalent


Part Number

FDFME3N311ZT

Description

Integrated N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDFME3N311ZT Datasheet PDF


FDFME3N311ZT Datasheet
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FDFME3N311ZT
September 2009
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
30 V, 1.6 A, 299 m
Features
General Description
„ Max rDS(on) = 299 mat VGS = 4.5 V, ID = 1.6 A
„ Max rDS(on) = 410 mat VGS = 2.5 V, ID = 1.3 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
„ Free from halogenated compounds and antimony oxides
„ HBM ESD protection level > 1600V (Note3)
„ RoHS Compliant
This device is designed specifically as a single package solution
for a boost topology in cellular handset and other ultra-portable
applications. It features a MOSFET with low input capacitance,
total gate charge and on-state resistance. An independently
connected schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
„ Boost Functions
Pin1
D
NC
A
K
D
S
G
K
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
VRRM
IO
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Schottky Repetitive Peak Reverse Voltage
TC = 25°C
TA = 25°C
Schottky Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 4)
Ratings
30
±12
1.6
4.5
1.1
0.5
28
1
-55 to +150
Units
V
V
A
W
V
A
°C
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
1T
Device
FDFME3N311ZT
Package
MicroFET 1.6x1.6 Thin
©2009 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C2
1
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
110
234
95
210
Reel Size
7’’
Tape Width
8mm
°C/W
Quantity
5000 units
www.fairchildsemi.com

FDFME3N311ZT Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 4.5 V, ID = 1.6 A
VGS = 2.5 V, ID = 1.3 A
VGS = 4.5 V, ID = 1.6 A,TJ = 150 °C
VDS = 5 V, ID = 1.6 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 1.6 A
VGS = 4.5 V, RGEN = 6
VGS = 4.5 V
VDD = 15 V
ID = 1.6 A
Drain-Source Diode Characteristics
IS Maximum continuous Drain-Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 0.9 A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 1.6 A, di/dt = 100 A/µs
Schottky Diode Characteristics
IR Reverse Leakage
VF Forward Voltage
VF Forward Voltage
VR = 28 V
IF = 1 A
IF = 500 mA
TJ = 25 °C
TJ = 85 °C
TJ = 25 °C
TJ = 85 °C
TJ = 25 °C
TJ = 85 °C
Min
30
0.5
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Typ Max Units
V
25 mVC
1 µA
±10 µA
1 1.5 V
-3 mV/°C
235 299
296 410 m
327 420
2.8 S
55 75 pF
15 20 pF
7 10 pF
7.5
6 12 ns
8 16 ns
22 35 ns
1.4 2.8 ns
1 1.4 nC
0.2 nC
0.3 nC
1.6 A
0.9 1.2
V
12 22 ns
3.1 10 nC
15
0.46
0.47
0.45
0.38
0.33
100
4.7
0.57
0.48
µA
mA
V
V
©2009 Fairchild Semiconductor Corporation
FDFME3N311ZT Rev.C2
2
www.fairchildsemi.com


Features Datasheet pdf FDFME3N311ZT Integrated N-Channel PowerT rench® MOSFET and Schottky Diode www. DataSheet4U.com September 2009 FDFME3 N311ZT Integrated N-Channel PowerTrench ® MOSFET and Schottky Diode 30 V, 1.6 A, 299 mΩ Features General Descriptio n This device is designed specifically as a single package solution for a boos t topology in cellular handset and othe r ultra-portable applications. It featu res a MOSFET with low input capacitance , total gate charge and on-state resist ance. An independently connected schott ky diode with low forward voltage and r everse leakage current to maximize boos t efficiency. The MicroFET 1.6x1.6 Thin package offers exceptional thermal per formance for it's physical size and is well suited to switching and linear mod e applications. „ Max rDS(on) = 299 m Ω at VGS = 4.5 V, ID = 1.6 A „ Max r DS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A „ Low profile: 0.55 mm maximum i n the new package MicroFET 1.6x1.6 Thin „ Free from halogenated compounds and antimony oxides „ HBM ESD protectio.
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