NTMS4176P

NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features www.DataSheet4U.com ăLow RDS(on) to Minimize Conduction Losses ăLow Capacitance to Minimize Driver Losses ăOptimized Gate Charge to Minimize Switching Losses ăSOIC-8 Surface Mount Package Saves Board Space ăThis is a Pb-Free Device Applications http://onsemi.com V(BR)DSS -30 V RDS(on) Max 18 mW @ -10 V 30 mW @ -4.5 V ID Max -9.6 A ăLoad Switches ăNotebook PC's ăDesktop PC's MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA t < 10 s (Note 1) Power Dissipation RqJA t < 10 s (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, TSTG IS EAS PD ID PD ID Symbol VDSS VGS ID Value -30 ±25 -7.3 -5.8 1.44 -5.5 -4.4 0.81 -9.6 -7.7 2.5 -39 -55 to +150 -2.1 112.5 W A °C A mJ W A 8 1 W A Unit V V A G P-Channel D S MARKING DIAGRAM & PIN ASSIGNMENT D D D D 8 SOIC-8 CASE 751 STYLE 12 1 S S S G 4176P AYWW G Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 15 Apk, L = 1.0 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4176P A Y WW G = Devi...