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NTMS4873NF Dataheets PDF



Part Number NTMS4873NF
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMS4873NF DatasheetNTMS4873NF Datasheet (PDF)

NTMS4873NF Power MOSFET Features www.DataSheet4U.com 30 V, 11.5 A, N−Channel, SO−8 • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 12 mW @ 10 V 15 mW @ 4.5 V N−Channel ID MAX 11.5 A Applications • Synchronous FET for DC−DC Converters • Low Side Not.

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NTMS4873NF Power MOSFET Features www.DataSheet4U.com 30 V, 11.5 A, N−Channel, SO−8 • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 12 mW @ 10 V 15 mW @ 4.5 V N−Channel ID MAX 11.5 A Applications • Synchronous FET for DC−DC Converters • Low Side Notebook Non−VCORE Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, Tstg IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 8.9 7.2 1.39 7.1 5.7 0.87 11.5 9.2 2.31 56 −55 to 150 3.3 60.5 W A °C A mJ W A 1 Unit V V A W A G D S MARKING DIAGRAM/ PIN ASSIGNMENT Source Source Source Gate 1 4873NF AYWWG G 8 Drain Drain Drain Drain SO−8 CASE 751 STYLE 12 Top View Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 11 Apk, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4873NF = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMS4873NFR2G Package Shipping† SO−8 2500/Tape & Reel (Pb−Free) TL 260 °C THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t v 10 s (Note 1) Junction−to−Foot (Drain) Junction−to−Ambient – Steady State (Note 2) Symbol RqJA RqJA RqJF RqJA Value 89.9 54.2 35.6 143 Unit °C/W †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2009 January, 2009 − Rev. 1 1 Publication Order Number: NTMS4873NF/D NTMS4873NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance LS LD LG RG TA = 25°C 0.66 0.20 1.5 1.5 3.0 nH nH nH W SWITCHING CHARACTERISTICS (Note 4) td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A TJ = 25°C TJ = 125°C VGS = 10 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W 9.8 3.8 22.3 14.3 16 7.0 45 25 V ns ns VGS(TH) VGS(TH)/TJ RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 10 V, VDS = 15 V, ID = 10 A VGS = 4.5 V, VDS = 15 V, ID = 10 A VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8.5 A VDS = 1.5 V, ID = 10 A CHARGES, CAPACITANCES AND GATE RESISTANCE 1275 345 145 10.5 1.3 3.7 3.9 21.4 6.0 6.5 32 nC 1900 525 225 16 nC pF VGS = VDS, ID = 250 mA 1.45 6 9 12 22 12 15 S 2.5 V mV/°C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 24 V TJ = 25°C VGS = 0 V, ID = 250 mA 30 10 250 ±100 V mV/°C mA nA Symbol Test Condition Min www.DataSheet4U.com Typ Max Unit VDS = 0 V, VGS = ±20 V DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 3.5 A 0.55 0.5 20 9.5 10.6 9.0 35 15 20 14 nC 0.7 3. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMS4873NF TYPICAL CHARACTERISTICS 25 20 3.5 V 15 3V 10 5 0 2.8 V 2.6 V 2.4 V 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 V 5V 4.5 V 4.2 V 4V 40 VGS = 3.2 V VDS ≥ 10 V ID, DRAIN CURRENT (A) 30 www.DataSheet4U.com ID, DRAIN C.


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