MMBTSA1015

MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. www.DataSheet4U.com The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 50 50 5 150 50 200 150 - 65 to +150 Unit V V V mA mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group O Y G at -VCE = 6 V, -IC = 150 mA Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC =100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 1 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) fT COB Min. 70 120 200 25 50 50 5 80 - Max. 140 240 400 0.1 0.1 0.3 1.1 7 Unit µA µA V V V V V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, ...