MMBTSA1235

MMBTSA1235 PNP Silicon Epitaxial Planar Transistor for low frequency amplification applications The transistor is subdivided into two groups E and F, according to its DC current gain. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 1 mA Current Gain Group at -VCE = 6 V, -IC = 0.1 mA Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 100 µA Emitter Base Breakdown Voltage at -IC = 100 µA Collector Cutoff Current at -VCB = 60 V Emitter Cutoff Current at -VEB = 6 V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Gain Bandwidth Product at -VCE = 6 V, -IC = 10 mA Collector Output Capacitance at -VCB = 6 V, f = 1 MHz Noise Figure at -VCE = 6 V, IE= 0.3 mA, f = 100 Hz, RG = 10 KΩ Symbol E F hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) -VBE(sat) fT Cob NF Min. 150 250 90 60 50 6 Typ. 200 4 Max. 300 500 0.1 0.1 0.3 1 20 Unit V V V µA µA V V MHz pF dB Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 60 50 6 200 200 150 - 55 to + 150 Unit V V V mA mW O C C O SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stoc...