MMBTSA1365
PNP Silicon Epitaxial Planar Transistor
for high current drive application The transistor is subdivided into ...
MMBTSA1365
PNP Silicon Epitaxial Planar
Transistor
for high current drive application The
transistor is subdivided into three groups E, F and G according to its DC current gain.
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SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot Tj TS
Value 25 20 4 700 1 200 150 - 55 to + 150
Unit V V V mA A mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 4 V, -IC = 100 mA E F G Symbol hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) fT Min. 150 250 400 25 20 4 Typ. 180 Max. 300 500 800 1 1 0.5 Unit µA µA V V V V MHz
Collector Cutoff Current at -VCB = 25 V Emitter Cutoff Current at -VEB = 2 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 100 µA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Saturation Voltage at -IC = 500 mA, -IB = 25 mA Transition Frequency at -VCE = 6 V, IE = 10 mA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 06/12/2006
MMBTSA1365
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Power Dissipation vs Ambient Temperature
300
Power Dissipation: Ptot (mW)
250
200
150
100
50 0 0 25 50 75 100
O
125
150
Ambient Temperature: ...
