MMBTSA1979

MMBTSA1979 PNP Silicon Epitaxial Planar Transistor For medium power amplifier applications The transistor is subdivided into two groups, O and Y according to its DC current gain. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 40 32 5 500 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Cutoff Current at -VCB = 40 V Emitter Cutoff Current at -VEB = 5 V Collector Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 6 V, -IC = 20 mA Collector Output Capacitance at -VCB = 6 V, f = 1 MHz O Y Symbol hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) fT Cob Min. 70 120 40 32 5 Typ. 200 7.5 Max. 140 240 0.1 0.1 0.25 Unit V V V µA µA V MHz pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/08/2006 MMBTSA1979 www.DataSheet4U.com SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange...