MMBTSB1198
PNP Silicon Epitaxial Planar Transistor Low frequency transistor
The transistor is subdivided into two groups...
MMBTSB1198
PNP Silicon Epitaxial Planar
Transistor Low frequency
transistor
The
transistor is subdivided into two groups Q and R, according to its DC current gain.
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SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 80 80 5 0.5 200 150 -55 to +150 Unit V V V A mW
O
C C
O
Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 3 V, -IC = 100 mA Collector Cutoff Current at -VCB = 50 V Emitter Cutoff Current at -VEB = 4 V Collector-Base Breakdown Voltage at -IC = 50 µA Emitter-Base Breakdown Voltage at -IE = 50 µA Collector-Emitter Breakdown Voltage at -IC = 2 mA Collector-Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Transition Frequency at -VCE = 10 V, IE = 50 mA, f = 100 MHz Q R Symbol hFE hFE -ICBO -IEBO -VCBO -VEBO -VCEO -VCE(sat) Cob fT Min. 120 180 80 5 80 Typ. 11 180 Max. 270 390 0.5 0.5 0.5 Unit µA µA V V V V pF MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2005
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