MMBTSC1623

MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications www.DataSheet4U.com The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 100 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group O Y G L Symbol hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) fT COB Min. 90 135 200 300 60 50 5 Typ. 250 3 Max. 180 270 400 600 0.1 0.1 0.3 1 Unit V V V µA µA V V MHz pF Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Cutoff Current at VCB = 60 V Emitter Cutoff Current at VEB = 5 V Collector Saturation Voltage at IC = 100 mA, IB = 10 mA Base Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, IC = 10 mA Output Capacitance at VCB = 6 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/09/2006 MMBTSC1623 www.DataSheet4U.com SEMTECH ELECTRONICS LTD. (Subsidiary of Si...