MMBTSC2223

MMBTSC2223 NPN Silicon Epitaxial Planar Transistor High frequency amplifier The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group R O Y Symbol hFE hFE hFE VCE(sat) ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO fT COB CC-rb'b NF Min. 40 60 90 30 20 4 400 600 1 12 3 Typ. Max. 80 120 180 0.3 0.1 0.1 Unit V µA µA V V V MHz pF ps dB Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 30 20 4 20 200 150 -55 +150 Unit V V V mA mW O C C O Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Gain Bandwidth Product at VCE = 6 V, -IE =1 mA Output Capacitance at VCB = 6 V, IE = 0, f = 1 MHz Collector to Base Time Constant at VCE = 6 V, -IE = 1 mA, f = 31.9 MHz Noise Figure at VCE = 6 V, -IE = 1 mA, f = 100 MHz, RG = 50 Ω SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 14/12/2005 MMBTSC2223 www...